Electronic device

ABSTRACT

Provided is an electronic device including a semiconductor memory. The semiconductor memory may include: a vertical electrode formed over a substrate; a plurality of first memory elements and a plurality of first interlayer dielectric layers alternately stacked along a first side surface of the vertical electrode; and a plurality of second memory elements and a plurality of second interlayer dielectric layers alternately stacked along a second side surface of the vertical electrode, and the plurality of first memory elements correspond to the plurality of second interlayer dielectric layers, respectively, in the vertical direction.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority of Korean Patent Application No.10-2015-0081735, entitled “ELECTRONIC DEVICE” and filed on Jun. 10,2015, which is incorporated herein by reference in its entirety.

TECHNICAL FIELD

This patent document relates to memory circuits or devices and theirapplications in electronic devices or systems.

BACKGROUND

Recently, as electronic appliances trend toward miniaturization, lowpower consumption, high performance, multi-functionality, and so on,semiconductor devices capable of storing information in variouselectronic appliances such as a computer, a portable communicationdevice, and so on have been demanded in the art, and research has beenconducted for the semiconductor devices. Such semiconductor devicesinclude semiconductor devices which can store data using acharacteristic that they are switched between different resistant statesaccording to an applied voltage or current, for example, an RRAM(resistive random access memory), a PRAM (phase change random accessmemory), an FRAM (ferroelectric random access memory), an MRAM (magneticrandom access memory), an E-fuse, etc.

SUMMARY

The disclosed technology in this patent document includes memorycircuits or devices and their applications in electronic devices orsystems and various implementations of an electronic device whichincludes a semiconductor memory capable of improving the characteristicsof a variable resistance element.

In an implementation, there is provided an electronic device including asemiconductor memory. The semiconductor memory may include: a verticalelectrode formed over a substrate; a plurality of first memory elementsand a plurality of first interlayer dielectric layers alternatelystacked along a first side surface of the vertical electrode; and aplurality of second memory elements and a plurality of second interlayerdielectric layers alternately stacked along a second side surface of thevertical electrode, and the plurality of first memory elementscorrespond to the plurality of second interlayer dielectric layers,respectively, in the vertical direction.

The plurality of first memory elements have the same thickness as thecorresponding second interlayer dielectric layers. The plurality offirst memory elements have a larger thickness than the correspondingsecond interlayer dielectric layers. Each of the first and second memoryelements comprises a first electrode, a variable resistance layer, and asecond electrode, which are horizontally arranged. Any one of the firstand second electrodes is in contact with the vertical electrode, and hasa structure surrounded by the variable resistance layer. The variableresistance layer comprises a single-layer or multilayer structure. Thevariable resistance layer comprises a transition metal oxide, a metaloxide including a perovskite-based material, a phase change materialincluding a chalcogenide-based material, a ferrodielectric material, anda ferromagnetic material. The vertical electrode and the first andsecond electrodes comprise any one transition metal or nitride selectedfrom the group consisting of TiN, Pt, W, TaN, Ir, Ni, Cu, Ta, Ti, Hf,and Zr.

The electronic device may further comprising a microprocessor whichincludes: a control unit configured to receive a signal including acommand from an outside of the microprocessor, and performs extracting,decoding of the command, or controlling input or output of a signal ofthe microprocessor; an operation unit configured to perform an operationbased on a result that the control unit decodes the command; and amemory unit configured to store data for performing the operation, datacorresponding to a result of performing the operation, or an address ofdata for which the operation is performed, wherein the semiconductormemory unit that includes the resistance variable element is part of thememory unit in the microprocessor.

The electronic device may further comprising a processor which includes:a core unit configured to perform, based on a command inputted from anoutside of the processor, an operation corresponding to the command, byusing data; a cache memory unit configured to store data for performingthe operation, data corresponding to a result of performing theoperation, or an address of data for which the operation is performed;and a bus interface connected between the core unit and the cache memoryunit, and configured to transmit data between the core unit and thecache memory unit, wherein the semiconductor memory unit that includesthe resistance variable element is part of the cache memory unit in theprocessor.

The electronic device may further comprising a processing system whichincludes: a processor configured to decode a command received by theprocessor and control an operation for information based on a result ofdecoding the command; an auxiliary memory device configured to store aprogram for decoding the command and the information; a main memorydevice configured to call and store the program and the information fromthe auxiliary memory device such that the processor can perform theoperation using the program and the information when executing theprogram; and an interface device configured to perform communicationbetween at least one of the processor, the auxiliary memory device andthe main memory device and the outside, wherein the semiconductor memoryunit that includes the resistance variable element is part of theauxiliary memory device or the main memory device in the processingsystem.

The electronic device may further comprising a data storage system whichincludes: a storage device configured to store data and conserve storeddata regardless of power supply; a controller configured to controlinput and output of data to and from the storage device according to acommand inputted form an outside; a temporary storage device configuredto temporarily store data exchanged between the storage device and theoutside; and an interface configured to perform communication between atleast one of the storage device, the controller and the temporarystorage device and the outside, wherein the semiconductor memory unitthat includes the resistance variable element is part of the storagedevice or the temporary storage device in the data storage system.

The electronic device may further comprising a memory system whichincludes: a memory configured to store data and conserve stored dataregardless of power supply; a memory controller configured to controlinput and output of data to and from the memory according to a commandinputted form an outside; a buffer memory configured to buffer dataexchanged between the memory and the outside; and an interfaceconfigured to perform communication between at least one of the memory,the memory controller and the buffer memory and the outside, wherein thesemiconductor memory unit that includes the resistance variable elementis part of the memory or the buffer memory in the memory system.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a cross-sectional view of a semiconductor device in accordancewith an implementation.

FIG. 2 is an example of configuration diagram of a microprocessorimplementing memory circuitry based on the disclosed technology.

FIG. 3 is an example of configuration diagram of a processorimplementing memory circuitry based on the disclosed technology.

FIG. 4 is an example of configuration diagram of a system implementingmemory circuitry based on the disclosed technology.

FIG. 5 is an example of configuration diagram of a data storage systemimplementing memory circuitry based on the disclosed technology.

FIG. 6 is an example of configuration diagram of a memory systemimplementing memory circuitry based on the disclosed technology.

DETAILED DESCRIPTION

Various examples and implementations of the disclosed technology aredescribed below in detail with reference to the accompanying drawings.

The drawings may not be necessarily to scale and in some instances,proportions of at least some of structures in the drawings may have beenexaggerated in order to clearly illustrate certain features of thedescribed examples or implementations. In presenting a specific examplein a drawing or description having two or more layers in a multi-layerstructure, the relative positioning relationship of such layers or thesequence of arranging the layers as shown reflects a particularimplementation for the described or illustrated example and a differentrelative positioning relationship or sequence of arranging the layersmay be possible. In addition, a described or illustrated example of amulti-layer structure may not reflect all layers present in thatparticular multilayer structure (e.g., one or more additional layers maybe present between two illustrated layers). As a specific example, whena first layer in a described or illustrated multi-layer structure isreferred to as being “on” or “over” a second layer or “on” or “over” asubstrate, the first layer may be directly formed on the second layer orthe substrate but may also represent a structure where one or more otherintermediate layers may exist between the first layer and the secondlayer or the substrate.

FIG. 1 is a cross-sectional view of a semiconductor device in accordancewith an implementation.

As illustrated in FIG. 1, a vertical electrode 16 may be disposed over asubstrate 11. Along a first side surface of the vertical electrode 16, aplurality of first memory elements M1 and a plurality of firstinterlayer dielectric layers 12A may be alternately stacked. Along asecond side surface of the vertical electrode 16, a plurality of secondmemory elements M2 and a plurality of second interlayer dielectriclayers 12B may be alternately stacked.

The plurality of first memory elements M1 may be disposed to correspondto the respective second interlayer dielectric layers 12B in a verticaldirection perpendicular to a top surface of the substrate 11. In animplementation, a side surface of a first memory element M1 is paralleland opposite to a side surface of a corresponding second interlayerdielectric layer 12B with respect to the vertical electrode 16. That is,the plurality of first memory elements M1 disposed along the first sidesurface of the vertical electrode 16 and the plurality of second memoryelements M2 disposed along the second side surface of the verticalelectrode 16 may be alternately arranged, such that adjacent first andsecond memory elements M1 and M2 have a level difference from each otherin the vertical direction. In an implementation, bottom surfaces of theadjacent first and second memory elements M1 and M2 are spaced apartfrom the top surface of the substrate 11 by different distances.

Furthermore, an uppermost layer of the stack structure in which thefirst and second memory elements M1 and M2 and the first and secondinterlayer dielectric layers 12A and 12B are stacked may includecorresponding first and second interlayer dielectric layers 12A and 12B.

The first and second interlayer dielectric layers 12A and 12B mayinclude various insulating materials such as oxide and nitride.

The first and second memory elements M1 and M2 may store data using avariable resistance characteristic of switching between differentresistance states according to an applied voltage or current. Each ofthe first and second memory elements M1 and M2 may include twoelectrodes for applying a voltage or current and a variable resistancematerial interposed between the two electrodes. In an implementation,each of the first and second memory elements M1 and M2 may include afirst electrode 13A or 13B, a variable resistance layer 14A or 14B, anda second electrode 15A or 15B, which are arranged in a horizontaldirection parallel to the top surface of the substrate 11. In animplementation, the second electrode 15A or 15B may be in contact with acorresponding portion of the first or second side surface of thevertical electrode 16. Furthermore, the second electrode 15A or 15B mayinclude a portion surrounded by the variable resistance layer 14A or14B, respectively. FIG. 1 illustrates that each of the second electrodes15A and 15B has one side being in contact with a corresponding portionof the first and second side surfaces of the vertical electrode 16, andhas other sides being surrounded by a corresponding one of the variableresistance layers 14A and 14B. However, implementations of the presentdisclosure are not limited thereto.

FIG. 1 illustrates that the second electrodes 15A and 15B are formedseparately from the vertical electrode 16. However, implementations ofthe present disclosure are not limited thereto. In an implementation,after the variable resistance layers 14A and 14B have been formed, thesecond electrodes 15A and 15B and the vertical electrode 16 may beformed simultaneously through the same process.

The first electrodes 13A and 13B, the second electrodes 15A and 15B, andthe vertical electrode 16 may include a conductive material. Theconductive material may include at least one member of transition metaland nitride, e.g., at least one selected from the group consisting ofTiN, Pt, W, TaN, Ir, Ni, Cu, Ta, Ti, Hf, and Zr.

The variable resistance layers 14A and 14B may include a material whichswitches between different resistance states, according to a voltage orcurrent applied across the variable resistance layers 14A and 14B. Forexample, the variable resistance layers 14A and 14B may include any ofvarious materials used for RRAM, PRAM, FRAM, MRAM and the like. Forexample, the various materials may include a transition metal nitride, atransition metal oxide, a metal oxide such as a perovskite-basedmaterial, a phase change material such as a chalcogenide-based material,a ferrodielectric material, and a ferromagnetic material. The variableresistance layers 14A and 14B may have a single-layer structure or amultilayer structure which includes two or more layers to exhibit avariable resistance characteristic.

In the implementation shown in FIG. 1, the first and second memoryelements M1 and M2 being in contact with the respective side surfaces ofthe vertical electrode 16 may be asymmetrically arranged with respect tothe vertical electrode 16 such that adjacent first and second memoryelements M1 and M2 do not face each other, thereby reducing a couplingor disturbance issue between the adjacent memory elements M1 and M2.

Furthermore, the first memory elements M1 may have substantially thesame thickness as corresponding second interlayer dielectric layers 12B,and the second memory elements M2 may have substantially the samethickness as corresponding first interlayer dielectric layers 12A, asillustrated in FIG. 1. However, implementations of the presentdisclosure are not limited thereto. In an implementation, the first andsecond memory elements M1 and M2 may have a larger thickness than thatof the corresponding second and first interlayer dielectric layers 12Band 12A, respectively. In this implementation, because the first andsecond interlayer dielectric layers 12A and 12B have a thickness smallerthan that in the implementation shown in FIG. 1, the vertical electrode16 may have a smaller critical dimension (CD) than that in theimplementation shown in FIG. 1. As the thickness of the first and secondmemory elements M1 and M2 is increased, a gap-fill margin associatedwith the process of forming the first and second memory elements M1 andM2 may be further secured.

In accordance with the implementations, an electronic device includingthe semiconductor device can improve the characteristic of the variableresistance element.

The above and other memory circuits or semiconductor devices based onthe disclosed technology can be used in a range of devices or systems.FIGS. 2-6 provide some examples of devices or systems that can implementthe memory circuits disclosed herein.

FIG. 2 is an example of configuration diagram of a microprocessorimplementing memory circuitry based on the disclosed technology.

Referring to FIG. 2, a microprocessor 1000 may perform tasks forcontrolling and tuning a series of processes of receiving data fromvarious external devices, processing the data, and outputting processingresults to external devices. The microprocessor 1000 may include amemory unit 1010, an operation unit 1020, a control unit 1030, and soon. The microprocessor 1000 may be various data processing units such asa central processing unit (CPU), a graphic processing unit (GPU), adigital signal processor (DSP) and an application processor (AP).

The memory unit 1010 is a part which stores data in the microprocessor1000, as a processor register, register or the like. The memory unit1010 may include a data register, an address register, a floating pointregister and so on. Besides, the memory unit 1010 may include variousregisters. The memory unit 1010 may perform the function of temporarilystoring data for which operations are to be performed by the operationunit 1020, result data of performing the operations and addresses wheredata for performing of the operations are stored.

The memory unit 1010 may include one or more of the above-describedsemiconductor devices in accordance with the implementations. Forexample, the memory unit 1010 may include a vertical electrode formedover a substrate; a plurality of first memory elements and a pluralityof first interlayer dielectric layers alternately stacked along a firstside surface of the vertical electrode; and a plurality of second memoryelements and a plurality of second interlayer dielectric layersalternately stacked along a second side surface of the verticalelectrode, and the plurality of first memory elements correspond to theplurality of second interlayer dielectric layers, respectively, in thevertical direction. Through this, a fabrication process of the memoryunit 1010 may become easy and the reliability and yield of the memoryunit 1010 may be improved. As a consequence, operating characteristicsof the microprocessor 1000 may be improved.

The operation unit 1020 may perform four arithmetical operations orlogical operations according to results that the control unit 1030decodes commands. The operation unit 1020 may include at least onearithmetic logic unit (ALU) and so on.

The control unit 1030 may receive signals from the memory unit 1010, theoperation unit 1020 and an external device of the microprocessor 1000,perform extraction, decoding of commands, and controlling input andoutput of signals of the microprocessor 1000, and execute processingrepresented by programs.

The microprocessor 1000 according to the present implementation mayadditionally include a cache memory unit 1040 which can temporarilystore data to be inputted from an external device other than the memoryunit 1010 or to be outputted to an external device. In this case, thecache memory unit 1040 may exchange data with the memory unit 1010, theoperation unit 1020 and the control unit 1030 through a bus interface1050.

FIG. 3 is an example of configuration diagram of a processorimplementing memory circuitry based on the disclosed technology.

Referring to FIG. 3, a processor 1100 may improve performance andrealize multi-functionality by including various functions other thanthose of a microprocessor which performs tasks for controlling andtuning a series of processes of receiving data from various externaldevices, processing the data, and outputting processing results toexternal devices. The processor 1100 may include a core unit 1110 whichserves as the microprocessor, a cache memory unit 1120 which serves tostoring data temporarily, and a bus interface 1130 for transferring databetween internal and external devices. The processor 1100 may includevarious system-on-chips (SoCs) such as a multi-core processor, a graphicprocessing unit (GPU) and an application processor (AP).

The core unit 1110 of the present implementation is a part whichperforms arithmetic logic operations for data inputted from an externaldevice, and may include a memory unit 1111, an operation unit 1112 and acontrol unit 1113.

The memory unit 1111 is a part which stores data in the processor 1100,as a processor register, a register or the like. The memory unit 1111may include a data register, an address register, a floating pointregister and so on. Besides, the memory unit 1111 may include variousregisters. The memory unit 1111 may perform the function of temporarilystoring data for which operations are to be performed by the operationunit 1112, result data of performing the operations and addresses wheredata for performing of the operations are stored. The operation unit1112 is a part which performs operations in the processor 1100. Theoperation unit 1112 may perform four arithmetical operations, logicaloperations, according to results that the control unit 1113 decodescommands, or the like. The operation unit 1112 may include at least onearithmetic logic unit (ALU) and so on. The control unit 1113 may receivesignals from the memory unit 1111, the operation unit 1112 and anexternal device of the processor 1100, perform extraction, decoding ofcommands, controlling input and output of signals of processor 1100, andexecute processing represented by programs.

The cache memory unit 1120 is a part which temporarily stores data tocompensate for a difference in data processing speed between the coreunit 1110 operating at a high speed and an external device operating ata low speed. The cache memory unit 1120 may include a primary storagesection 1121, a secondary storage section 1122 and a tertiary storagesection 1123. In general, the cache memory unit 1120 includes theprimary and secondary storage sections 1121 and 1122, and may includethe tertiary storage section 1123 in the case where high storagecapacity is required. As the occasion demands, the cache memory unit1120 may include an increased number of storage sections. That is tosay, the number of storage sections which are included in the cachememory unit 1120 may be changed according to a design. The speeds atwhich the primary, secondary and tertiary storage sections 1121, 1122and 1123 store and discriminate data may be the same or different. Inthe case where the speeds of the respective storage sections 1121, 1122and 1123 are different, the speed of the primary storage section 1121may be largest. At least one storage section of the primary storagesection 1121, the secondary storage section 1122 and the tertiarystorage section 1123 of the cache memory unit 1120 may include one ormore of the above-described semiconductor devices in accordance with theimplementations. For example, the cache memory unit 1120 may include avertical electrode formed over a substrate; a plurality of first memoryelements and a plurality of first interlayer dielectric layersalternately stacked along a first side surface of the verticalelectrode; and a plurality of second memory elements and a plurality ofsecond interlayer dielectric layers alternately stacked along a secondside surface of the vertical electrode, and the plurality of firstmemory elements correspond to the plurality of second interlayerdielectric layers, respectively, in the vertical direction. Throughthis, a fabrication process of the cache memory unit 1120 may becomeeasy and the reliability and yield of the cache memory unit 1120 may beimproved. As a consequence, operating characteristics of the processor1100 may be improved.

Although it was shown in FIG. 3 that all the primary, secondary andtertiary storage sections 1121, 1122 and 1123 are configured inside thecache memory unit 1120, it is to be noted that all the primary,secondary and tertiary storage sections 1121, 1122 and 1123 of the cachememory unit 1120 may be configured outside the core unit 1110 and maycompensate for a difference in data processing speed between the coreunit 1110 and the external device. Meanwhile, it is to be noted that theprimary storage section 1121 of the cache memory unit 1120 may bedisposed inside the core unit 1110 and the secondary storage section1122 and the tertiary storage section 1123 may be configured outside thecore unit 1110 to strengthen the function of compensating for adifference in data processing speed. In another implementation, theprimary and secondary storage sections 1121, 1122 may be disposed insidethe core units 1110 and tertiary storage sections 1123 may be disposedoutside core units 1110.

The bus interface 1130 is a part which connects the core unit 1110, thecache memory unit 1120 and external device and allows data to beefficiently transmitted.

The processor 1100 according to the present implementation may include aplurality of core units 1110, and the plurality of core units 1110 mayshare the cache memory unit 1120. The plurality of core units 1110 andthe cache memory unit 1120 may be directly connected or be connectedthrough the bus interface 1130. The plurality of core units 1110 may beconfigured in the same way as the above-described configuration of thecore unit 1110. In the case where the processor 1100 includes theplurality of core unit 1110, the primary storage section 1121 of thecache memory unit 1120 may be configured in each core unit 1110 incorrespondence to the number of the plurality of core units 1110, andthe secondary storage section 1122 and the tertiary storage section 1123may be configured outside the plurality of core units 1110 in such a wayas to be shared through the bus interface 1130. The processing speed ofthe primary storage section 1121 may be larger than the processingspeeds of the secondary and tertiary storage section 1122 and 1123. Inanother implementation, the primary storage section 1121 and thesecondary storage section 1122 may be configured in each core unit 1110in correspondence to the number of the plurality of core units 1110, andthe tertiary storage section 1123 may be configured outside theplurality of core units 1110 in such a way as to be shared through thebus interface 1130.

The processor 1100 according to the present implementation may furtherinclude an embedded memory unit 1140 which stores data, a communicationmodule unit 1150 which can transmit and receive data to and from anexternal device in a wired or wireless manner, a memory control unit1160 which drives an external memory device, and a media processing unit1170 which processes the data processed in the processor 1100 or thedata inputted from an external input device and outputs the processeddata to an external interface device and so on. Besides, the processor1100 may include a plurality of various modules and devices. In thiscase, the plurality of modules which are added may exchange data withthe core units 1110 and the cache memory unit 1120 and with one another,through the bus interface 1130.

The embedded memory unit 1140 may include not only a volatile memory butalso a nonvolatile memory. The volatile memory may include a DRAM(dynamic random access memory), a mobile DRAM, an SRAM (static randomaccess memory), and a memory with similar functions to above mentionedmemories, and so on. The nonvolatile memory may include a ROM (read onlymemory), a NOR flash memory, a NAND flash memory, a phase change randomaccess memory (PRAM), a resistive random access memory (RRAM), a spintransfer torque random access memory (STTRAM), a magnetic random accessmemory (MRAM), a memory with similar functions.

The communication module unit 1150 may include a module capable of beingconnected with a wired network, a module capable of being connected witha wireless network and both of them. The wired network module mayinclude a local area network (LAN), a universal serial bus (USB), anEthernet, power line communication (PLC) such as various devices whichsend and receive data through transmit lines, and so on. The wirelessnetwork module may include Infrared Data Association (IrDA), codedivision multiple access (CDMA), time division multiple access (TDMA),frequency division multiple access (FDMA), a wireless LAN, Zigbee, aubiquitous sensor network (USN), Bluetooth, radio frequencyidentification (RFID), long term evolution (LTE), near fieldcommunication (NFC), a wireless broadband Internet (Wibro), high speeddownlink packet access (HSDPA), wideband CDMA (WCDMA), ultra wideband(UWB) such as various devices which send and receive data withouttransmit lines, and so on.

The memory control unit 1160 is to administrate and process datatransmitted between the processor 1100 and an external storage deviceoperating according to a different communication standard. The memorycontrol unit 1160 may include various memory controllers, for example,devices which may control IDE (Integrated Device Electronics), SATA(Serial Advanced Technology Attachment), SCSI (Small Computer SystemInterface), RAID (Redundant Array of Independent Disks), an SSD (solidstate disk), eSATA (External SATA), PCMCIA (Personal Computer MemoryCard International Association), a USB (universal serial bus), a securedigital (SD) card, a mini secure digital (mSD) card, a micro securedigital (micro SD) card, a secure digital high capacity (SDHC) card, amemory stick card, a smart media (SM) card, a multimedia card (MMC), anembedded MMC (eMMC), a compact flash (CF) card, and so on.

The media processing unit 1170 may process the data processed in theprocessor 1100 or the data inputted in the forms of image, voice andothers from the external input device and output the data to theexternal interface device. The media processing unit 1170 may include agraphic processing unit (GPU), a digital signal processor (DSP), a highdefinition audio device (HD audio), a high definition multimediainterface (HDMI) controller, and so on.

FIG. 4 is an example of configuration diagram of a system implementingmemory circuitry based on the disclosed technology.

Referring to FIG. 4, a system 1200 as an apparatus for processing datamay perform input, processing, output, communication, storage, etc. toconduct a series of manipulations for data. The system 1200 may includea processor 1210, a main memory device 1220, an auxiliary memory device1230, an interface device 1240, and so on. The system 1200 of thepresent implementation may be various electronic systems which operateusing processors, such as a computer, a server, a PDA (personal digitalassistant), a portable computer, a web tablet, a wireless phone, amobile phone, a smart phone, a digital music player, a PMP (portablemultimedia player), a camera, a global positioning system (GPS), a videocamera, a voice recorder, a telematics, an audio visual (AV) system, asmart television, and so on.

The processor 1210 may decode inputted commands and processes operation,comparison, etc. for the data stored in the system 1200, and controlsthese operations. The processor 1210 may include a microprocessor unit(MPU), a central processing unit (CPU), a single/multi-core processor, agraphic processing unit (GPU), an application processor (AP), a digitalsignal processor (DSP), and so on.

The main memory device 1220 is a storage which can temporarily store,call and execute program codes or data from the auxiliary memory device1230 when programs are executed and can conserve memorized contents evenwhen power supply is cut off. The main memory device 1220 may includeone or more of the above-described semiconductor devices in accordancewith the implementations. For example, the main memory device 1220 mayinclude a vertical electrode formed over a substrate; a plurality offirst memory elements and a plurality of first interlayer dielectriclayers alternately stacked along a first side surface of the verticalelectrode; and a plurality of second memory elements and a plurality ofsecond interlayer dielectric layers alternately stacked along a secondside surface of the vertical electrode, and the plurality of firstmemory elements correspond to the plurality of second interlayerdielectric layers, respectively, in the vertical direction. Throughthis, a fabrication process of the main memory device 1220 may becomeeasy and the reliability and yield of the main memory device 1220 may beimproved. As a consequence, operating characteristics of the system 1200may be improved.

Also, the main memory device 1220 may further include a static randomaccess memory (SRAM), a dynamic random access memory (DRAM), and so on,of a volatile memory type in which all contents are erased when powersupply is cut off. Unlike this, the main memory device 1220 may notinclude the semiconductor devices according to the implementations, butmay include a static random access memory (SRAM), a dynamic randomaccess memory (DRAM), and so on, of a volatile memory type in which allcontents are erased when power supply is cut off.

The auxiliary memory device 1230 is a memory device for storing programcodes or data. While the speed of the auxiliary memory device 1230 isslower than the main memory device 1220, the auxiliary memory device1230 can store a larger amount of data. The auxiliary memory device 1230may include one or more of the above-described semiconductor devices inaccordance with the implementations. For example, the auxiliary memorydevice 1230 may include a vertical electrode formed over a substrate; aplurality of first memory elements and a plurality of first interlayerdielectric layers alternately stacked along a first side surface of thevertical electrode; and a plurality of second memory elements and aplurality of second interlayer dielectric layers alternately stackedalong a second side surface of the vertical electrode, and the pluralityof first memory elements correspond to the plurality of secondinterlayer dielectric layers, respectively, in the vertical direction.Through this, a fabrication process of the auxiliary memory device 1230may become easy and the reliability and yield of the auxiliary memorydevice 1230 may be improved. As a consequence, operating characteristicsof the system 1200 may be improved.

Also, the auxiliary memory device 1230 may further include a datastorage system (see the reference numeral 1300 of FIG. 5) such as amagnetic tape using magnetism, a magnetic disk, a laser disk usingoptics, a magneto-optical disc using both magnetism and optics, a solidstate disk (SSD), a USB memory (universal serial bus memory), a securedigital (SD) card, a mini secure digital (mSD) card, a micro securedigital (micro SD) card, a secure digital high capacity (SDHC) card, amemory stick card, a smart media (SM) card, a multimedia card (MMC), anembedded MMC (eMMC), a compact flash (CF) card, and so on. Unlike this,the auxiliary memory device 1230 may not include the semiconductordevices according to the implementations, but may include data storagesystems (see the reference numeral 1300 of FIG. 5) such as a magnetictape using magnetism, a magnetic disk, a laser disk using optics, amagneto-optical disc using both magnetism and optics, a solid state disk(SSD), a USB memory (universal serial bus memory), a secure digital (SD)card, a mini secure digital (mSD) card, a micro secure digital (microSD) card, a secure digital high capacity (SDHC) card, a memory stickcard, a smart media (SM) card, a multimedia card (MMC), an embedded MMC(eMMC), a compact flash (CF) card, and so on.

The interface device 1240 may be to perform exchange of commands anddata between the system 1200 of the present implementation and anexternal device. The interface device 1240 may be a keypad, a keyboard,a mouse, a speaker, a mike, a display, various human interface devices(HIDs), a communication device, and so on. The communication device mayinclude a module capable of being connected with a wired network, amodule capable of being connected with a wireless network and both ofthem. The wired network module may include a local area network (LAN), auniversal serial bus (USB), an Ethernet, power line communication (PLC),such as various devices which send and receive data through transmitlines, and so on. The wireless network module may include Infrared DataAssociation (IrDA), code division multiple access (CDMA), time divisionmultiple access (TDMA), frequency division multiple access (FDMA), awireless LAN, Zigbee, a ubiquitous sensor network (USN), Bluetooth,radio frequency identification (RFID), long term evolution (LTE), nearfield communication (NFC), a wireless broadband Internet (Wibro), highspeed downlink packet access (HSDPA), wideband CDMA (WCDMA), ultrawideband (UWB), such as various devices which send and receive datawithout transmit lines, and so on.

FIG. 5 is an example of configuration diagram of a data storage systemimplementing memory circuitry based on the disclosed technology.

Referring to FIG. 5, a data storage system 1300 may include a storagedevice 1310 which has a nonvolatile characteristic as a component forstoring data, a controller 1320 which controls the storage device 1310,an interface 1330 for connection with an external device, and atemporary storage device 1340 for storing data temporarily. The datastorage system 1300 may be a disk type such as a hard disk drive (HDD),a compact disc read only memory (CDROM), a digital versatile disc (DVD),a solid state disk (SSD), and so on, and a card type such as a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC), an embedded MMC (eMMC), acompact flash (CF) card, and so on.

The storage device 1310 may include a nonvolatile memory which storesdata semi-permanently. The nonvolatile memory may include a ROM (readonly memory), a NOR flash memory, a NAND flash memory, a phase changerandom access memory (PRAM), a resistive random access memory (RRAM), amagnetic random access memory (MRAM), and so on.

The controller 1320 may control exchange of data between the storagedevice 1310 and the interface 1330. To this end, the controller 1320 mayinclude a processor 1321 for performing an operation for, processingcommands inputted through the interface 1330 from an outside of the datastorage system 1300 and so on.

The interface 1330 is to perform exchange of commands and data betweenthe data storage system 1300 and the external device. In the case wherethe data storage system 1300 is a card type, the interface 1330 may becompatible with interfaces which are used in devices, such as a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC), an embedded MMC (eMMC), acompact flash (CF) card, and so on, or be compatible with interfaceswhich are used in devices similar to the above mentioned devices. In thecase where the data storage system 1300 is a disk type, the interface1330 may be compatible with interfaces, such as IDE (Integrated DeviceElectronics), SATA (Serial Advanced Technology Attachment), SCSI (SmallComputer System Interface), eSATA (External SATA), PCMCIA (PersonalComputer Memory Card International Association), a USB (universal serialbus), and so on, or be compatible with the interfaces which are similarto the above mentioned interfaces. The interface 1330 may be compatiblewith one or more interfaces having a different type from each other.

The temporary storage device 1340 can store data temporarily forefficiently transferring data between the interface 1330 and the storagedevice 1310 according to diversifications and high performance of aninterface with an external device, a controller and a system. Thetemporary storage device 1340 for temporarily storing data may includeone or more of the above-described semiconductor devices in accordancewith the implementations. The temporary storage device 1340 may includea vertical electrode formed over a substrate; a plurality of firstmemory elements and a plurality of first interlayer dielectric layersalternately stacked along a first side surface of the verticalelectrode; and a plurality of second memory elements and a plurality ofsecond interlayer dielectric layers alternately stacked along a secondside surface of the vertical electrode, and the plurality of firstmemory elements correspond to the plurality of second interlayerdielectric layers, respectively, in the vertical direction. Throughthis, a fabrication process of the storage device 1310 or the temporarystorage device 1340 may become easy and the reliability and yield of thestorage device 1310 or the temporary storage device 1340 may beimproved. As a consequence, operating characteristics and data storagecharacteristics of the data storage system 1300 may be improved.

FIG. 6 is an example of configuration diagram of a memory systemimplementing memory circuitry based on the disclosed technology.

Referring to FIG. 6, a memory system 1400 may include a memory 1410which has a nonvolatile characteristic as a component for storing data,a memory controller 1420 which controls the memory 1410, an interface1430 for connection with an external device, and so on. The memorysystem 1400 may be a card type such as a solid state disk (SSD), a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC), an embedded MMC (eMMC), acompact flash (CF) card, and so on.

The memory 1410 for storing data may include one or more of theabove-described semiconductor devices in accordance with theimplementations. For example, the memory 1410 may include a verticalelectrode formed over a substrate; a plurality of first memory elementsand a plurality of first interlayer dielectric layers alternatelystacked along a first side surface of the vertical electrode; and aplurality of second memory elements and a plurality of second interlayerdielectric layers alternately stacked along a second side surface of thevertical electrode, and the plurality of first memory elementscorrespond to the plurality of second interlayer dielectric layers,respectively, in the vertical direction. Through this, a fabricationprocess of the memory 1410 may become easy and the reliability and yieldof the memory 1410 may be improved. As a consequence, operatingcharacteristics and data storage characteristics of the memory system1400 may be improved.

Also, the memory 1410 according to the present implementation mayfurther include a ROM (read only memory), a NOR flash memory, a NANDflash memory, a phase change random access memory (PRAM), a resistiverandom access memory (RRAM), a magnetic random access memory (MRAM), andso on, which have a nonvolatile characteristic.

The memory controller 1420 may control exchange of data between thememory 1410 and the interface 1430. To this end, the memory controller1420 may include a processor 1421 for performing an operation for andprocessing commands inputted through the interface 1430 from an outsideof the memory system 1400.

The interface 1430 is to perform exchange of commands and data betweenthe memory system 1400 and the external device. The interface 1430 maybe compatible with interfaces which are used in devices, such as a USBmemory (universal serial bus memory), a secure digital (SD) card, a minisecure digital (mSD) card, a micro secure digital (micro SD) card, asecure digital high capacity (SDHC) card, a memory stick card, a smartmedia (SM) card, a multimedia card (MMC), an embedded MMC (eMMC), acompact flash (CF) card, and so on, or be compatible with interfaceswhich are used in devices similar to the above mentioned devices. Theinterface 1430 may be compatible with one or more interfaces having adifferent type from each other.

The memory system 1400 according to the present implementation mayfurther include a buffer memory 1440 for efficiently transferring databetween the interface 1430 and the memory 1410 according todiversification and high performance of an interface with an externaldevice, a memory controller and a memory system. For example, the buffermemory 1440 for temporarily storing data may include one or more of theabove-described semiconductor devices in accordance with theimplementations. The buffer memory 1440 may include a vertical electrodeformed over a substrate; a plurality of first memory elements and aplurality of first interlayer dielectric layers alternately stackedalong a first side surface of the vertical electrode; and a plurality ofsecond memory elements and a plurality of second interlayer dielectriclayers alternately stacked along a second side surface of the verticalelectrode, and the plurality of first memory elements correspond to theplurality of second interlayer dielectric layers, respectively, in thevertical direction. Through this, a fabrication process of the buffermemory 1440 may become easy and the reliability and yield of the buffermemory 1440 may be improved. As a consequence, operating characteristicsand data storage characteristics of the memory system 1400 may beimproved.

Moreover, the buffer memory 1440 according to the present implementationmay further include an SRAM (static random access memory), a DRAM(dynamic random access memory), and so on, which have a volatilecharacteristic, and a phase change random access memory (PRAM), aresistive random access memory (RRAM), a spin transfer torque randomaccess memory (STTRAM), a magnetic random access memory (MRAM), and soon, which have a nonvolatile characteristic. Unlike this, the buffermemory 1440 may not include the semiconductor devices according to theimplementations, but may include an SRAM (static random access memory),a DRAM (dynamic random access memory), and so on, which have a volatilecharacteristic, and a phase change random access memory (PRAM), aresistive random access memory (RRAM), a spin transfer torque randomaccess memory (STTRAM), a magnetic random access memory (MRAM), and soon, which have a nonvolatile characteristic.

Features in the above examples of electronic devices or systems in FIGS.2-6 based on the memory devices disclosed in this document may beimplemented in various devices, systems or applications. Some examplesinclude mobile phones or other portable communication devices, tabletcomputers, notebook or laptop computers, game machines, smart TV sets,TV set top boxes, multimedia servers, digital cameras with or withoutwireless communication functions, wrist watches or other wearabledevices with wireless communication capabilities.

While this patent document contains many specifics, these should not beconstrued as limitations on the scope of any invention or of what may beclaimed, but rather as descriptions of features that may be specific toparticular embodiments of particular inventions. Certain features thatare described in this patent document in the context of separateembodiments can also be implemented in combination in a singleembodiment. Conversely, various features that are described in thecontext of a single embodiment can also be implemented in multipleembodiments separately or in any suitable subcombination. Moreover,although features may be described above as acting in certaincombinations and even initially claimed as such, one or more featuresfrom a claimed combination can in some cases be excised from thecombination, and the claimed combination may be directed to asubcombination or variation of a subcombination.

Similarly, while operations are depicted in the drawings in a particularorder, this should not be understood as requiring that such operationsbe performed in the particular order shown or in sequential order, orthat all illustrated operations be performed, to achieve desirableresults. Moreover, the separation of various system components in theembodiments described in this patent document should not be understoodas requiring such separation in all embodiments.

Only a few implementations and examples are described. Otherimplementations, enhancements and variations can be made based on whatis described and illustrated in this patent document.

What is claimed is:
 1. An electronic device comprising a semiconductormemory, wherein the semiconductor memory comprises: a vertical electrodedisposed over a substrate and extending in a first direction; aplurality of first memory elements and a plurality of first interlayerdielectric layers, wherein a first memory element and a first interlayerdielectric layer are alternately stacked along a first side surface ofthe vertical electrode; and a plurality of second memory elements and aplurality of second interlayer dielectric layers, wherein a secondmemory element and a second interlayer dielectric layer are alternatelystacked along a second side surface of the vertical electrode, whereinthe plurality of first memory elements are disposed to correspond to theplurality of second interlayer dielectric layers, respectively, in asecond direction with respect to the vertical electrode, the seconddirection being perpendicular to the first direction.
 2. The electronicdevice of claim 1, wherein the plurality of first memory elements havesubstantially the same thickness as that of the corresponding secondinterlayer dielectric layers.
 3. The electronic device of claim 1,wherein the plurality of first memory elements have a thickness greaterthan that of the corresponding second interlayer dielectric layers. 4.The electronic device of claim 1, wherein each of the first and secondmemory elements comprises a first electrode, a variable resistancelayer, and a second electrode, which are arranged in the seconddirection.
 5. The electronic device of claim 4, wherein any one of thefirst and second electrodes is in contact with the vertical electrode,and has a portion surrounded by the variable resistance layer.
 6. Theelectronic device of claim 4, wherein the variable resistance layer hasa single-layer or multilayer structure.
 7. The electronic device ofclaim 4, wherein the variable resistance layer comprises a transitionmetal oxide, a metal oxide including a perovskite-based material, aphase change material including a chalcogenide-based material, aferrodielectric material, a ferromagnetic material, or a combinationthereof.
 8. The electronic device of claim 4, wherein the verticalelectrode and the first and second electrodes comprise one or moremembers of transition metal and nitride, which are selected from thegroup consisting of TiN, Pt, W, TaN, Ir, Ni, Cu, Ta, Ti, Hf, and Zr. 9.The electronic device according to claim 1, further comprising amicroprocessor which includes: a control unit configured to receive asignal including a command from an outside of the microprocessor, andperforms extracting, decoding of the command, or controlling input oroutput of a signal of the microprocessor; an operation unit configuredto perform an operation based on a result that the control unit decodesthe command; and a memory unit configured to store data for performingthe operation, data corresponding to a result of performing theoperation, or an address of data for which the operation is performed,wherein the semiconductor memory unit that includes the resistancevariable element is part of the memory unit in the microprocessor. 10.The electronic device according to claim 1, further comprising aprocessor which includes: a core unit configured to perform, based on acommand inputted from an outside of the processor, an operationcorresponding to the command, by using data; a cache memory unitconfigured to store data for performing the operation, datacorresponding to a result of performing the operation, or an address ofdata for which the operation is performed; and a bus interface connectedbetween the core unit and the cache memory unit, and configured totransmit data between the core unit and the cache memory unit, whereinthe semiconductor memory unit that includes the resistance variableelement is part of the cache memory unit in the processor.
 11. Theelectronic device according to claim 1, further comprising a processingsystem which includes: a processor configured to decode a commandreceived by the processor and control an operation for information basedon a result of decoding the command; an auxiliary memory deviceconfigured to store a program for decoding the command and theinformation; a main memory device configured to call and store theprogram and the information from the auxiliary memory device such thatthe processor can perform the operation using the program and theinformation when executing the program; and an interface deviceconfigured to perform communication between at least one of theprocessor, the auxiliary memory device and the main memory device andthe outside, wherein the semiconductor memory unit that includes theresistance variable element is part of the auxiliary memory device orthe main memory device in the processing system.
 12. The electronicdevice according to claim 1, further comprising a data storage systemwhich includes: a storage device configured to store data and conservestored data regardless of power supply; a controller configured tocontrol input and output of data to and from the storage deviceaccording to a command inputted form an outside; a temporary storagedevice configured to temporarily store data exchanged between thestorage device and the outside; and an interface configured to performcommunication between at least one of the storage device, the controllerand the temporary storage device and the outside, wherein thesemiconductor memory unit that includes the resistance variable elementis part of the storage device or the temporary storage device in thedata storage system.
 13. The electronic device according to claim 1,further comprising a memory system which includes: a memory configuredto store data and conserve stored data regardless of power supply; amemory controller configured to control input and output of data to andfrom the memory according to a command inputted form an outside; abuffer memory configured to buffer data exchanged between the memory andthe outside; and an interface configured to perform communicationbetween at least one of the memory, the memory controller and the buffermemory and the outside, wherein the semiconductor memory unit thatincludes the resistance variable element is part of the memory or thebuffer memory in the memory system.
 14. The electronic device accordingto claim 1, wherein side surfaces of the plurality of first memoryelements are parallel and opposite to corresponding side surfaces of theplurality of second memory elements, respectively, with respect to thevertical electrode.
 15. The electronic device according to claim 1,wherein the first direction is perpendicular to a top surface of thesubstrate.
 16. The electronic device according to claim 1, wherein a topsurface of each of the plurality of first memory elements issubstantially coplanar with a bottom surface of a corresponding one ofthe plurality of second memory elements.
 17. The electronic deviceaccording to claim 1, wherein the plurality of first memory elements andthe plurality of second memory elements are arranged asymmetrically withrespect to a center line of the vertical electrode, the center lineextending in the first direction.
 18. The electronic device of claim 5,wherein the any one of the first and second electrodes has one sidebeing in contact with the vertical electrode and the other sides beingsurrounded by the variable resistance layer.